Datasheet LTC1279 (Analog Devices) - 3

LTC1279
U W DY A IC ACCURACY (Notes 5, 10) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
S/(N + D) Signal-to-Noise Plus Distortion Ratio 100kHz Input Signal ● 70 72 dB 300kHz Input Signal 70 dB THD Total Harmonic Distortion 100kHz Input Signal ● – 82 – 78 dB First 5 Harmonics 300kHz Input Signal – 74 dB Peak Harmonic or Spurious Noise 100kHz Input Signal ● – 82 – 78 dB 300kHz Input Signal – 80 dB IMD Intermodulation Distortion fIN1 = 94.189kHz, fIN2 = 97.705kHz 2nd Order Terms – 81 dB 3rd Order Terms – 78 dB fIN1 = 299.26kHz, fIN2 = 305.12kHz 2nd Order Terms – 77 dB 3rd Order Terms – 74 dB Full Power Bandwidth 5 MHz Full Linear Bandwidth (S/(N + D) ≥ 68dB) 500 kHz
U U U I TER AL REFERE CE CHARACTERISTICS (Note 5) PARAMETER CONDITIONS MIN TYP MAX UNITS
VREF Output Voltage IOUT = 0 2.400 2.420 2.440 V VREF Output Tempco IOUT = 0 ● ±10 ±45 ppm/°C VREF Line Regulation 4.95V ≤ VDD ≤ 5.25V 0.01 LSB/V – 5.25V ≤ VSS ≤ – 4.95V 0.01 LSB/V VREF Load Regulation – 5mA ≤ IOUT ≤ 800µA 2 LSB/mA
U U DIGITAL I PUTS A D DIGITAL OUTPUTS (Note 5) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
VIH High Level Input Voltage VDD = 5.25V ● 2.4 V VIL Low Level Input Voltage VDD = 4.95V ● 0.8 V IIN Digital Input Current VIN = 0V to VDD ● ±10 µA CIN Digital Input Capacitance 5 pF VOH High Level Output Voltage VDD = 4.95V IO = – 10µA 4.9 V IO = – 200µA ● 4.0 V VOL Low Level Output Voltage VDD = 4.95V IO = 160µA 0.05 V IO = 1.6mA ● 0.10 0.4 V IOZ High-Z Output Leakage D11 to D0 VOUT = 0V to VDD, CS High ● ±10 µA COZ High-Z Output Capacitance D11 to D0 CS High (Note 9 ) ● 15 pF ISOURCE Output Source Current VOUT = 0V – 10 mA ISINK Output Sink Current VOUT = VDD 10 mA 3