Datasheet LF253, LF353 (STMicroelectronics) - 4

HerstellerSTMicroelectronics
BeschreibungWide bandwidth dual JFET operational amplifiers
Seiten / Seite15 / 4 — Electrical characteristics. LF253, LF353. 3 Electrical. characteristics. …
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DokumentenspracheEnglisch

Electrical characteristics. LF253, LF353. 3 Electrical. characteristics. Table 3

Electrical characteristics LF253, LF353 3 Electrical characteristics Table 3

Textversion des Dokuments

Electrical characteristics LF253, LF353 3 Electrical characteristics Table 3. Electrical characteristics at VCC = ±15 V, Tamb = +25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit
Input offset voltage (R 3 10 V s = 10kΩ) io mV Tmin ≤ Tamb ≤ Tmax 13 DVio Input offset voltage drift 10 µV/°C Input offset current (1) 5 100 pA Iio Tmin ≤ Tamb ≤ Tmax 4 nA Input bias current (1) 20 200 pA Iib Tmin ≤ Tamb ≤ Tmax 20 nA Large signal voltage gain (R 50 200 A L = 2kΩ, Vo = ±10V) vd V/mV Tmin ≤ Tamb ≤ Tmax 25 Supply voltage rejection ratio (R 80 86 SVR S = 10kΩ) dB Tmin ≤ Tamb ≤ Tmax 80 Supply current, no load 1.4 3.2 ICC mA Tmin ≤ Tamb ≤ Tmax 3.2 ±11 +15 Vicm Input common mode voltage range V -12 Common mode rejection ratio (R 70 86 CMR S = 10kΩ) dB Tmin ≤ Tamb ≤ Tmax 70 Output short-circuit current 10 40 60 IOS mA Tmin ≤ Tamb ≤ Tmax 10 60 Output voltage swing RL = 2kΩ 10 12 R 12 13.5 ±V L = 10kΩ opp V Tmin ≤ Tamb ≤ Tmax RL = 2kΩ 10 RL = 10kΩ 12 SR Slew rate, Vi = 10V, RL = 2kΩ, CL = 100pF, unity gain 12 16 V/µs tr Rise time, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain 0.1 µs Kov Overshoot, Vi = 20mV, RL = 2kΩ, CL = 100pF, unity gain 10 % GBP Gain bandwidth product, f = 100kHz, Vin = 10mV, RL = 2kΩ, CL = 100pF 2.5 4 MHz Ri Input resistance 1012 Ω Total harmonic distortion, f= 1kHz, A THD v= 20dB, RL= 2kΩ, CL=100pF, 0.01 % Vo= 2Vpp Equivalent input noise voltage e nV n 15 ------ RS = 100Ω, f = 1KHz Hz ∅m Phase margin 45 Degrees Vo1/Vo2 Channel separation (Av = 100) 120 dB 1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature. 4/15 Doc ID 2153 Rev 3 Document Outline 1 Schematics Figure 1. Schematic diagram (each amplifier) 2 Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings Table 2. Operating conditions 3 Electrical characteristics Table 3. Electrical characteristics at VCC = ±15 V, Tamb = +25˚C (unless otherwise specified) Figure 2. Maximum peak-to-peak output voltage vs. frequency, RL = 2 kW Figure 3. Maximum peak-to-peak output voltage vs. frequency, RL = 10 kW Figure 4. Maximum peak-to-peak output voltage versus frequency Figure 5. Maximum peak-to-peak output voltage versus free air temperature Figure 6. Maximum peak-to-peak output voltage versus load resistance Figure 7. Maximum peak-to-peak output voltage versus supply voltage Figure 8. Input bias current versus free air temperature Figure 9. Large signal differential voltage amplification versus free air temp. Figure 10. Large signal differential voltage amplification and phase shift versus frequency Figure 11. Total power dissipation versus free air temperature Figure 12. Supply current per amplifier versus free air temperature Figure 13. Supply current per amplifier versus supply voltage Figure 14. Common mode rejection ratio versus free air temperature Figure 15. Voltage follower large signal pulse response Figure 16. Output voltage versus elapsed time Figure 17. Equivalent input noise voltage versus frequency Figure 18. Total harmonic distortion versus frequency 4 Parameter measurement information Figure 19. Voltage follower Figure 20. Gain of 10 inverting amplifier 5 Typical application Figure 21. Quadruple oscillator 6 Package information 6.1 DIP8 package information Figure 22. DIP8 package mechanical drawing Table 4. DIP8 package mechanical data 6.2 SO-8 package information Figure 23. SO-8 package mechanical drawing Table 5. SO-8 package mechanical data 7 Ordering information Table 6. Order codes 8 Revision history Table 7. Document revision history