Datasheet MURT40060R - Genesic Semiconductor DIODE, RECTIF, 600 V, 400 A, THREE TOWER — Datenblatt

Genesic Semiconductor MURT40060R

Part Number: MURT40060R

Detaillierte Beschreibung

Manufacturer: Genesic Semiconductor

Description: DIODE, RECTIF, 600 V, 400 A, THREE TOWER

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Docket:
MURT40040 thru MURT40060R
Silicon Super Fast Recovery Diode
Features
· High Surge Capability · Types up to 600 V VRRM Three Tower Package
VRRM = 50 V - 600 V IF = 400 A

Specifications:

  • Diode Type: Fast Recovery
  • Forward Current If(AV): 200 A
  • Forward Surge Current Ifsm Max: 3.3kA
  • Forward Voltage VF Max: 1.7 V
  • Number of Pins: 3
  • Operating Temperature Range: -40°C to +175°C
  • Package / Case: Three Tower
  • Repetitive Reverse Voltage Vrrm Max: 600 V
  • Reverse Recovery Time trr Max: 240 ns

Accessories:

  • Electrolube - HTS35SL
  • H S MARSTON - 96CN-01500-A-200
  • Multicomp - MK3311