Datasheet MBR20H200CT - Taiwan Semiconductor DIODE, SCHOTTKY, 20 A, 200 V — Datenblatt

Taiwan Semiconductor MBR20H200CT

Part Number: MBR20H200CT

Detaillierte Beschreibung

Manufacturer: Taiwan Semiconductor

Description: DIODE, SCHOTTKY, 20 A, 200 V

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Docket:
MBR20H100CT ­ MBR20H200CT
Pb
RoHS
COMPLIANCE
20.0 AMPS.

Schottky Barrier Rectifiers

Specifications:

  • Current Ifsm: 150 A
  • Current Ir Max: 5 µA
  • Diode Configuration: Dual Common Cathode
  • Diode Type: Schottky
  • Forward Current If(AV): 20 A
  • Forward Surge Current Ifsm Max: 150 A
  • Forward Voltage VF Max: 970 mV
  • Forward Voltage: 880 mV
  • Junction Temperature Tj Max: 175°C
  • Junction Temperature Tj Min: +65°C
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • Operating Temperature Range: -65°C to +175°C
  • Package / Case: TO-220AB
  • Pin Configuration: 1(A1), 2(K1+K2), 3(A2)
  • Repetitive Reverse Voltage Vrrm Max: 200 V
  • SVHC: No SVHC (15-Dec-2010)

RoHS: Yes

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