Datasheet SI4963BDY - Vishay MOSFET, DUAL, PP, SO-8 — Datenblatt

Vishay SI4963BDY

Part Number: SI4963BDY

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

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Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 4.9 A
  • Current Id Max: -4.9 A
  • Drain Source Voltage Vds: 20 V
  • Fall Time tf: 55 ns
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 32 MOhm
  • On State Resistance @ Vgs = 2.5V: 50 MOhm
  • On State Resistance @ Vgs = 4.5V: 32 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • P Channel Gate Charge: 14nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.1 W
  • Pulse Current Idm: 40 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Rise Time: 40 ns
  • Threshold Voltage Vgs Typ: -1.4 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: P Channel
  • Turn Off Time: 80 ns
  • Turn On Time: 30 ns
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes