Datasheet SI4559EY - Vishay MOSFET, DUAL, NP, SO-8 — Datenblatt

Vishay SI4559EY

Part Number: SI4559EY

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, NP, SO-8

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Docket:
Si4559EY
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDS (V)

Specifications:

  • Cont Current Id N Channel 2: 4.5 A
  • Cont Current Id P Channel: 3.1 A
  • Continuous Drain Current Id: 3.1 A
  • Current Id Max: 4.5 A
  • Drain Source Voltage Vds: 60 V
  • External Depth: 5.26 mm
  • External Length / Height: 1.2 mm
  • External Width: 6.2 mm
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • N-channel Gate Charge: 19nC
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 100 MOhm
  • On State Resistance @ Vgs = 10V N Channel: 55 MOhm
  • On State Resistance @ Vgs = 10V P Channel: 120 MOhm
  • On State Resistance @ Vgs = 4.5V N Channel: 75 MOhm
  • On State Resistance @ Vgs = 4.5V P Channel: 150 MOhm
  • Operating Temperature Range: -55°C to +175°C
  • P Channel Gate Charge: 16nC
  • Package / Case: SOIC
  • Power Dissipation Pd: 2.4 W
  • Pulse Current Idm: 30 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N and P Channel
  • Voltage Vds P Channel Max: 60 V
  • Voltage Vds: 60 V

RoHS: Yes