Datasheet SI4511DY-T1-E3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, SOIC — Datenblatt

Vishay SI4511DY-T1-E3

Part Number: SI4511DY-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC

Specifications:

  • Continuous Drain Current Id: 9.6 A
  • Drain Source Voltage Vds: 20 V
  • On Resistance Rds(on): 14.5 MOhm
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Polarity: N and P Channel

RoHS: Y-Ex

Andere Namen:

SI4511DYT1E3, SI4511DY T1 E3