Datasheet SIR770DP-T1-GE3 - Vishay MOSFET, NN CH, SC DIO, 30 V, 8 A, PPAKS08 — Datenblatt

Vishay SIR770DP-T1-GE3

Part Number: SIR770DP-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, SC DIO, 30 V, 8 A, PPAKS08

data sheetDownload Data Sheet

Docket:
SiR770DP
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS Channel-1 Channel-2 30 30 RDS(on) () 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V 0.021 at VGS = 10 V 0.025 at VGS = 4.5 V ID (A)

Specifications:

  • Current Id Max: 8 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 17500µ Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 3.6 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.8 V
  • Transistor Case Style: SOIC PowerPAK
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Fairchild - FDFS6N754
  • Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SIR770DPT1GE3, SIR770DP T1 GE3