Datasheet SI4946BEY-T1-E3 - Vishay MOSFET, DUAL, N, SOIC — Datenblatt

Vishay SI4946BEY-T1-E3

Part Number: SI4946BEY-T1-E3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, DUAL, N, SOIC

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Specifications:

  • Base Number: 4946
  • Continuous Drain Current Id: 6.5 A
  • Current Id Max: 6.5 A
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • N-channel Gate Charge: 9.2nC
  • Number of Pins: 8
  • On Resistance Rds(on): 41 MOhm
  • On State Resistance @ Vgs = 4.5V: 52 MOhm
  • On State resistance @ Vgs = 10V: 41 MOhm
  • Operating Temperature Range: -50°C to +175°C
  • Package / Case: SOIC
  • Power Dissipation: 2.4 W
  • Rds(on) Test Voltage Vgs: 20 V
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: 2.4 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Max: 3 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

SI4946BEYT1E3, SI4946BEY T1 E3