Datasheet SI4936CDY-T1-GE3 - Vishay MOSFET, NN-CH, 30 V, 5.8 A, SO8 — Datenblatt

Vishay SI4936CDY-T1-GE3

Part Number: SI4936CDY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN-CH, 30 V, 5.8 A, SO8

data sheetDownload Data Sheet

Docket:
New Product
Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 5.8 A
  • Drain Source Voltage Vds: 30 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 33 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 2.3 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: Dual N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI4936CDYT1GE3, SI4936CDY T1 GE3