Datasheet SI4900DY-T1-GE3 - Vishay MOSFET, NN CH, DIODE, 60 V, 5.3 A, 8-SOIC — Datenblatt

Vishay SI4900DY-T1-GE3

Part Number: SI4900DY-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, NN CH, DIODE, 60 V, 5.3 A, 8-SOIC

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Docket:
Si4900DY
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V ID (A)a 5.3 4.7 Qg (Typ.) 13 nC

Specifications:

  • Current Id Max: 4.3 A
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Number of Pins: 8
  • On Resistance Rds(on): 0.046 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 2 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Threshold Voltage Vgs Typ: 2.5 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Diodes - ZXMN6A11DN8TA
  • Fischer Elektronik - FK 244 13 D2 PAK

Andere Namen:

SI4900DYT1GE3, SI4900DY T1 GE3