Datasheet SI3529DV-T1-GE3 - Vishay DUAL N/P CHANNEL MOSFET, 40 V, TSOP — Datenblatt

Vishay SI3529DV-T1-GE3

Part Number: SI3529DV-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: DUAL N/P CHANNEL MOSFET, 40 V, TSOP

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Docket:
Si3529DV
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 40 - 40 RDS(on) () 0.125 at VGS = 10 V 0.165 at VGS = 4.5 V 0.215 at VGS = - 10 V 0.335 at VGS = - 4.5 V ID (A)a Qg (Typ.) 2.250 1.95 - 1.76 - 1.4 2.2 2.3

Specifications:

  • Drain Source Voltage Vds: 40 V
  • Number of Pins: 6
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1.15 W
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Polarity: Dual N & P Channel

RoHS: Yes

Andere Namen:

SI3529DVT1GE3, SI3529DV T1 GE3