Datasheet ZXMN6A25DN8TA - Diodes MOSFET, DUAL, N, 60VSO-8 — Datenblatt

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Manufacturer: Diodes

Description: MOSFET, DUAL, N, 60VSO-8

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Docket:
ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.050 @ VGS = 10V 0.070 @ VGS = 4.5V ID (A) 5 4.2
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Specifications:

• Continuous Drain Current Id: 5 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Transistors: 2
• On Resistance Rds(on): 0.05 Ohm
• Package / Case: SOIC
• Pin Configuration: 1(S1), 2(G1), 3(S2), 4(G2), 5+6(D2), 7+8(D1)
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 24 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N
• Transistor Type: Enhancement
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes