Datasheet ZXMN6A09DN8 - Diodes MOSFET, DUAL, N, SO-8 — Datenblatt

Diodes ZXMN6A09DN8

Part Number: ZXMN6A09DN8

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, DUAL, N, SO-8

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Docket:
ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.040 @ VGS= 10V 0.060 @ VGS= 4.5V ID (A) 5.6 4.6
Description
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage power management applications.

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 5.2 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 60 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 45 MOhm
  • On State Resistance Max: 45 MOhm
  • Package / Case: SOIC
  • Power Dissipation Pd: 1.25 W
  • Power Dissipation Ptot Max: 1.25 W
  • Pulse Current Idm: 17.6 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SMD Marking: ZXMN6A09D
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 3 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes