Datasheet FDR8308P - Fairchild MOSFET, DUAL, PP, SUPERSOT-8 — Datenblatt

Fairchild FDR8308P

Part Number: FDR8308P

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, SUPERSOT-8

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Docket:
November 1998
FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features

Specifications:

  • Continuous Drain Current Id: 3.2 A
  • Current Id Max: 3.2 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 0.05 Ohm
  • Package / Case: SuperSOT-8
  • Power Dissipation Pd: 0.8 W
  • Power Dissipation: 0.8 W
  • Pulse Current Idm: 20 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • SMD Marking: FDR8308P
  • Transistor Case Style: Super-SOT
  • Transistor Polarity: Dual P
  • Transistor Type: MOSFET
  • Voltage Vds: 20 V
  • Voltage Vgs th Max: -1.5 V

RoHS: Yes