Datasheet FDR8308P - Fairchild MOSFET, DUAL, PP, SUPERSOT-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, SUPERSOT-8

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Docket:
November 1998
FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features

Specifications:

• Continuous Drain Current Id: 3.2 A
• Current Id Max: 3.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 0.05 Ohm
• Package / Case: SuperSOT-8
• Power Dissipation Pd: 0.8 W
• Power Dissipation: 0.8 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: -4.5 V
• SMD Marking: FDR8308P
• Transistor Case Style: Super-SOT
• Transistor Polarity: Dual P
• Transistor Type: MOSFET
• Voltage Vds: 20 V
• Voltage Vgs th Max: -1.5 V

RoHS: Yes