Datasheet ZXMN3A04DN8 - Diodes MOSFET, DUAL, N, SO-8 — Datenblatt

Diodes ZXMN3A04DN8

Part Number: ZXMN3A04DN8

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, DUAL, N, SO-8

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Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current Id: 7.6 A
  • Current Id Max: 8.5 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 25 MOhm
  • On State Resistance Max: 25 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Power Dissipation Pd: 2.15 W
  • Power Dissipation Ptot Max: 1.25 W
  • Pulse Current Idm: 25 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SMD Marking: ZXMN3A04D
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 30 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes