Datasheet PMWD16UN - NXP MOSFET, N, TSSOP-8 — Datenblatt

NXP PMWD16UN

Part Number: PMWD16UN

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, TSSOP-8

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Docket:
PMWD16UN
Dual N-channel µTrenchMOSTM ultra low level FET
Rev.

02 -- 24 March 2005 Product data sheet
1. Product profile
1.1 General description

Specifications:

  • Base Number: 4
  • Capacitance Ciss Typ: 1366 pF
  • Continuous Drain Current Id: 9.9 A
  • Drain Source Voltage Vds: 20 V
  • Mounting Type: SMD
  • Number of Transistors: 2
  • On Resistance Rds(on): 19 MOhm
  • On State Resistance @ Vgs = 1.8V: 30 MOhm
  • On State Resistance @ Vgs = 4.5V: 19 MOhm
  • Package / Case: TSSOP
  • Pin Configuration: D1(1), S1(2+3), G1(4), D2(8), S2(6+7), G2(5)
  • Power Dissipation Pd: 3.1 W
  • Pulse Current Idm: 39.5 A
  • SMD Marking: 16UN
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: TSSOP
  • Transistor Polarity: Dual N Channel
  • Voltage Vgs Max: 10 V

RoHS: Yes