Datasheet IRF7507PBF - International Rectifier MOSFET, DUAL, NP, LOGIC, MICRO-8 — Datenblatt

International Rectifier IRF7507PBF

Part Number: IRF7507PBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL, NP, LOGIC, MICRO-8

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Docket:
PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description
l l

Specifications:

  • Cont Current Id N Channel 2: 2.4 A
  • Cont Current Id P Channel: 1.7 A
  • Continuous Drain Current Id: 2.4 A
  • Current Id Max: 2.4 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 20 V
  • External Depth: 5.03 mm
  • External Length / Height: 1.11 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 135 MOhm
  • On State Resistance N Channel Max: 135 MOhm
  • On State Resistance P Channel Max: 270 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: Micro8
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm N Channel 2: 19 A
  • Pulse Current Idm P Channel: 14 A
  • Pulse Current Idm: 14 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Row Pitch: 4.24 mm
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: MicroSOIC
  • Transistor Polarity: N and P Channel

RoHS: Yes