Datasheet NTE222 - NTE Electronics DUAL N CHANNEL MOSFET, 25 V, TO-72 — Datenblatt

NTE Electronics NTE222

Part Number: NTE222

Detaillierte Beschreibung

Manufacturer: NTE Electronics

Description: DUAL N CHANNEL MOSFET, 25 V, TO-72

data sheetDownload Data Sheet

Docket:
NTE222 Field Effect Transistor Dual Gate N­Channel MOSFET
Absolute Maximum Ratings: Drain­Source Voltage, VDS .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain­Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­10mA Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25°C . . . . . . . . . . . . . . . .

Specifications:

  • Continuous Drain Current Id: 50 mA
  • Drain Source Voltage Vds: 25 V
  • Number of Pins: 4
  • Operating Temperature Range: -65°C to +175°C
  • Power Dissipation Pd: 360 mW
  • Transistor Polarity: N Channel