Datasheet ZXMN6A11DN8TA - Diodes MOSFET, DUAL, N, 60 V, SO-8 — Datenblatt

Diodes ZXMN6A11DN8TA

Part Number: ZXMN6A11DN8TA

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, DUAL, N, 60 V, SO-8

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Docket:
ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.2 2.6
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Specifications:

  • Continuous Drain Current Id: 3.2 A
  • Current Id Max: 3.2 A
  • Drain Source Voltage Vds: 60 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 180 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOIC
  • Pin Configuration: 1(S1), 2(G1), 3(S2), 4(G2), 5+6(D2), 7+8(D1)
  • Power Dissipation Pd: 2.1 W
  • Pulse Current Idm: 13.7 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 1 V
  • Transistor Case Style: SOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 60 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • Roth Elektronik - RE932-01
  • STANNOL - 574601