Datasheet QS6J3TR - Rohm MOSFET, P, VGS -2.5 V — Datenblatt

Rohm QS6J3TR

Part Number: QS6J3TR

Detaillierte Beschreibung

Manufacturer: Rohm

Description: MOSFET, P, VGS -2.5 V

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Specifications:

  • Capacitance Ciss Typ: 270 pF
  • Continuous Drain Current Id: 1.5 A
  • Current Id Max: -1.5 A
  • Drain Source Voltage Vds: 20 V
  • Fall Time tf: 20 ns
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 430 MOhm
  • Package / Case: TSMT6
  • Pin Configuration: 1(S1), 2(G1), 3(D2), 4(S2), 5(G2), 6(D1)
  • Power Dissipation: 1.25 W
  • Pulse Current Idm: 6 A
  • Rds(on) Test Voltage Vgs: -4.5 V
  • Rise Time: 12 ns
  • SVHC: No SVHC (20-Jun-2011)
  • Threshold Voltage Vgs Typ: -2 V
  • Transistor Case Style: TSMT
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -20 V
  • Voltage Vgs Max: -12 V
  • Voltage Vgs Rds on Measurement: 2.5 V
  • Voltage Vgs th Max: -2 V
  • Voltage Vgs th Min: -0.7 V

RoHS: Yes