Datasheet PMGD8000LN - NXP MOSFET, DUAL, NN, SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, DUAL, NN, SOT-363

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Docket:
PMGD8000LN
Dual µTrenchMOSTM logic level FET
MBD128
Rev.

01 -- 27 February 2003
Product data

Specifications:

• Continuous Drain Current Id: 125 mA
• Current Id Max: 125 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 7 ns
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Number of Transistors: 2
• On Resistance Rds(on): 8 Ohm
• On State Resistance Max: 8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Power Dissipation Pd: 200 mW
• Pulse Current Idm: 250 mA
• Rds(on) Test Voltage Vgs: 4 V
• Rise Time: 7 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-363
• Transistor Polarity: N Channel
• Turn Off Time: 15 ns
• Turn On Time: 10 ns
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: 1.5 V

RoHS: Yes