Datasheet PHN210T,118 - NXP MOSFET N-CH 30 V 3.4 A 8-SOIC — Datenblatt

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Manufacturer: NXP

Description: MOSFET N-CH 30 V 3.4 A 8-SOIC

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Docket:
PHN210T
Dual N-channel TrenchMOS intermediate level FET
Rev.

02 -- 15 December 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 2.2 A
• Current Id Max: 2.4 A
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

PHN210T118, PHN210T 118