Datasheet IRF7501PBF - International Rectifier MOSFET, DUAL, NN, MICRO-8 — Datenblatt

International Rectifier IRF7501PBF

Part Number: IRF7501PBF

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, DUAL, NN, MICRO-8

data sheetDownload Data Sheet

Docket:
PD - 95345
IRF7501PbF
HEXFET® Power MOSFET
l l l l l l l l
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free

Specifications:

  • Continuous Drain Current Id: 2.4 A
  • Current Id Max: 2.4 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • External Depth: 5.03 mm
  • External Length / Height: 1.11 mm
  • External Width: 3.05 mm
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Lead Spacing: 0.65 mm
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 8
  • Number of Transistors: 2
  • On Resistance Rds(on): 135 MOhm
  • On State Resistance Max: 135 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: Micro8
  • Power Dissipation Pd: 1.25 W
  • Pulse Current Idm: 19 A
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Row Pitch: 4.24 mm
  • SMD Marking: F7501
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 700 mV
  • Transistor Case Style: MicroSOIC
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 20 V
  • Voltage Vds: 20 V
  • Voltage Vgs Rds on Measurement: 4.5 V
  • Voltage Vgs th Min: 700 mV

RoHS: Yes

Accessories:

  • LICEFA - V11-7
  • Roth Elektronik - RE903