Datasheet FDC6303N - Fairchild MOSFET, DUAL, N, SMD, SUPERSOT-6 — Datenblatt

Fairchild FDC6303N

Part Number: FDC6303N

Detaillierte Beschreibung

Manufacturer: Fairchild

Description: MOSFET, DUAL, N, SMD, SUPERSOT-6

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Docket:
August 1997
FDC6303N Digital FET, Dual N-Channel
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Features

Specifications:

  • Continuous Drain Current Id: 680 mA
  • Current Id Max: 680 mA
  • Drain Source Voltage Vds: 25 V
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • On Resistance Rds(on): 450 MOhm
  • Package / Case: SuperSOT-6
  • Power Dissipation Pd: 900 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 800 mV
  • Transistor Case Style: SuperSOT
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 25 V
  • Voltage Vgs Max: 800 mV
  • Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes