Datasheet DMN5L06DWK-7 - Diodes MOSFET, NN CH, SOT-363 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Diodes

Description: MOSFET, NN CH, SOT-363

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Docket:
DMN5L06DWK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
· · · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance (1.0V max) Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2kV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
Mechanical Data

Specifications:

• Continuous Drain Current Id, N Channel: 305 mA
• Continuous Drain Current Id: 305 mA
• Current Id Max: 800 mA
• Drain Source Voltage Vds, N Channel: 50 V
• Drain Source Voltage Vds: 50 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), N Channel: 2 Ohm
• On Resistance Rds(on): 2 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-363
• Power Dissipation: 250 mW
• Rds(on) Test Voltage Vgs: 5 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-363
• Transistor Polarity: Dual N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 50 V
• Voltage Vgs Rds on Measurement: 5 V

RoHS: Yes

Andere Namen:

DMN5L06DWK7, DMN5L06DWK 7