Datasheet SIA813DJ-T1-GE3 - Vishay P CHANNEL MOSFET, -20 V, 4.5 A, SC-70 — Datenblatt

Vishay SIA813DJ-T1-GE3

Part Number: SIA813DJ-T1-GE3

Detaillierte Beschreibung

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -20 V, 4.5 A, SC-70

data sheetDownload Data Sheet

Docket:
New Product
SiA813DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY

Specifications:

  • Continuous Drain Current, Id: -4.5 A
  • Drain Source Voltage, Vds: -20 V
  • On Resistance, Rds(on): 0.46 Ohm
  • Rds(on) Test Voltage, Vgs: 8 V
  • Transistor Polarity: P Channel / Schottky Diode

RoHS: Yes

Andere Namen:

SIA813DJT1GE3, SIA813DJ T1 GE3