Datasheet Texas Instruments CSD17309Q3 — Datenblatt

HerstellerTexas Instruments
SerieCSD17309Q3
ArtikelnummerCSD17309Q3
Datasheet Texas Instruments CSD17309Q3

30 V N-Kanal NexFET ™ Leistungs-MOSFET 8-VSON-CLIP -55 bis 150

Datenblätter

CSD17309Q3 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 411 Kb, Revision: B, Datei veröffentlicht: Sep 9, 2011
Auszug aus dem Dokument

Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin8
Package TypeDQG
Package QTY2500
CarrierLARGE T&R
Device MarkingCSD17309
Width (mm)3.3
Length (mm)3.3
Thickness (mm)1
Mechanical DataHerunterladen

Parameter

ConfigurationSingle
IDM, Max Pulsed Drain Current(Max)112 A
PackageSON3x3 mm
QG Typ7.5 nC
QGD Typ1.7 nC
RDS(on) Typ at VGS=4.5V4.9 mOhm
Rds(on) Max at VGS=4.5V6.3 mOhms
VDS30 V
VGS10 V
VGSTH Typ1.2 V

Öko-Plan

RoHSCompliant
Pb FreeYes

Design Kits und Evaluierungsmodule

  • Evaluation Modules & Boards: TPS65983EVM
    TPS65983 USB Type-C and USB PD Controller Power Switch and High-Speed Multiplexer Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)
  • Evaluation Modules & Boards: TPS65982-EVM
    TPS65982 USB Type-C & USB PD Controller Power Switch & High Speed Multiplexer EVM
    Lifecycle Status: Active (Recommended for new designs)
  • Evaluation Modules & Boards: DLPDLCR4710EVM-G2
    Full HD DLP4710 Chipset Evaluation Module
    Lifecycle Status: Active (Recommended for new designs)

Anwendungshinweise

  • Ringing Reduction Techniques for NexFET High Performance MOSFETs
    PDF, 1.4 Mb, Datei veröffentlicht: Nov 16, 2011

Herstellerklassifikation

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor