Datasheet IXKC25N80C - IXYS MOSFET, N, ISOPLUS220 — Datenblatt

IXYS IXKC25N80C

Part Number: IXKC25N80C

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS220

Specifications:

  • Capacitance Ciss Typ: 4600 pF
  • Continuous Drain Current Id: 20 A
  • Drain Source Voltage Vds: 800 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 170nC
  • On State Resistance: 150 MOhm
  • Package / Case: ISOPLUS-220
  • Power Dissipation Pd: 140 W
  • Reverse Recovery Time trr Max: 550 ns
  • Rth: 0.9
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOPLUS-220
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 800 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes