Datasheet IXFR180N10 - IXYS MOSFET, N, ISOPLUS247 — Datenblatt

IXYS IXFR180N10

Part Number: IXFR180N10

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

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Docket:
HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165
(Electrically Isolated Back Surface) Single MOSFET Die
Preliminary data
RDS(on) =
V A 8 mW

Specifications:

  • Capacitance Ciss Typ: 9400 pF
  • Continuous Drain Current Id: 165 A
  • Current Id Max: 165 A
  • Drain Source Voltage Vds: 100 V
  • Isolation Voltage: 2.5 kV
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 65nC
  • Number of Pins: 3
  • On State Resistance: 8 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: ISOPLUS-247
  • Power Dissipation Pd: 400 W
  • Pulse Current Idm: 720 A
  • Rds(on) Test Voltage Vgs: 10 V
  • Reverse Recovery Time trr Max: 250 ns
  • Rth: 0.3
  • Threshold Voltage Vgs Typ: 4 V
  • Transistor Case Style: ISOPLUS-247
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 100 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A