Datasheet FDV302P - Fairchild MOSFET, P, DIGITAL, SOT-23 — Datenblatt

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Manufacturer: Fairchild

Description: MOSFET, P, DIGITAL, SOT-23

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Docket:
October 1997
FDV302P Digital FET, P-Channel
General Description
This P-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one P-channel FET can replace several digital transistors with different bias resistors such as the DTCx and DCDx series.
Features

Specifications:

• Continuous Drain Current Id: 120 mA
• Current Id Max: 120 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 25 V
• ESD HBM: 6 kV
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 13 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 350 mW
• Pulse Current Idm: 500 mA
• Rds(on) Test Voltage Vgs: 2.7 V
• SMD Marking: 302P
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -25 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: -4.5 V
• Voltage Vgs th Max: -1.5 V

RoHS: Yes