Datasheet NTE Electronics NTE244 — Datenblatt

NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 4A
= 3V Max @ IC = 8A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 80V
Collector–Base Voltage, VCB . 80V
Emitter–Base Voltage, VEB . 5V
Collector Current, IC
Continuous . 8A
Peak . 16A
Base Current, IB 120mA
Total Power Dissipation (TC = +25°C), PD . 100W
Derate Above 25°C . 0.571W/°C …