Datasheet SK10GH123 - Semikron IGBT MODULE, H BRIDGE, 1200 V — Datenblatt

Semikron SK10GH123

Part Number: SK10GH123

Detaillierte Beschreibung

Manufacturer: Semikron

Description: IGBT MODULE, H BRIDGE, 1200 V

Specifications:

  • Av Current Ic: 16 A
  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 3.2 V
  • Current Ic Continuous a Max: 16 A
  • Current Ic Continuous b Max: 11 A
  • Current Temperature: 25°C
  • DC Collector Current: 16 A
  • External Depth: 28 mm
  • External Width: 40.5 mm
  • Fixing Centres: 38 mm
  • Fixing Hole Diameter: 2 mm
  • Mounting Type: Screw
  • Number of Transistors: 4
  • Operating Temperature Range: -40°C to +150°C
  • Package / Case: SEMITOP 2
  • Power Dissipation Pd: 1.8 kW
  • Pulsed Current Icm: 32 A
  • Rise Time: 45 ns
  • SMD Marking: SEMITOP2
  • Transistor Case Style: SEMITOP 2
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 1.2 kV
  • Voltage: 1.2 kV

RoHS: Yes