Datasheet SEMIX202GB066HDS - Semikron IGBT MODULE, 2X600V — Datenblatt

Semikron SEMIX202GB066HDS

Part Number: SEMIX202GB066HDS

Detaillierte Beschreibung

Manufacturer: Semikron

Description: IGBT MODULE, 2X600V

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Docket:
SEMiX 202GB066HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX®2s Trench IGBT Modules
SEMiX 202GB066HDs Module Preliminary Data Inverse Diode
Features

Specifications:

  • Av Current Ic: 275 A
  • Collector Emitter Voltage V(br)ceo: 1 V
  • Collector Emitter Voltage Vces: 1.9 V
  • Current Ic Continuous a Max: 275 A
  • DC Collector Current: 274 A
  • Forward Surge Current Ifsm Max: 1000 A
  • Mounting Type: Screw
  • Operating Temperature Range: -40°C to +175°C
  • Package / Case: SEMiX 2s
  • Pulsed Current Icm: 400 A
  • Repetitive Reverse Voltage Vrrm Max: 600 V
  • Rise Time: 80 ns
  • Transistor Case Style: SEMiX 2s
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 600 V

RoHS: Yes