Datasheet DIM200WHS12-A000 - Dynex IGBT, HALF-BRIDGE 200 A 1200 V — Datenblatt

Dynex DIM200WHS12-A000

Part Number: DIM200WHS12-A000

Detaillierte Beschreibung

Manufacturer: Dynex

Description: IGBT, HALF-BRIDGE 200 A 1200 V

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Docket:
DIM200WHS12-A000
DIM200WHS12-A000
Half Bridge IGBT Module
Replaces December 2003 version, issue DS5671-2.2 DS5671-3.0 February 2004
FEATURES

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 2.7 V
  • Current Ic @ Vce Sat: 200 A
  • Current Ic Continuous a Max: 200 A
  • Current Temperature: 80°C
  • Fall Time tf: 50 ns
  • Full Power Rating Temperature: 25°C
  • Number of Transistors: 2
  • Package / Case: W
  • Power Dissipation Pd: 1.39 kW
  • Power Dissipation: 1.39 kW
  • Pulsed Current Icm: 400 A
  • Rise Time: 95 ns
  • Transistor Polarity: N Channel
  • Voltage Vces: 1.2 kV

RoHS: Yes

Andere Namen:

DIM200WHS12A000, DIM200WHS12 A000