Datasheet FZ1000R33HL3 - Infineon IGBT, HI PO, 1 S/W, 3300 V, 1000 A — Datenblatt

Infineon FZ1000R33HL3

Part Number: FZ1000R33HL3

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Manufacturer: Infineon

Description: IGBT, HI PO, 1 S/W, 3300 V, 1000 A

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Specifications:

  • Collector Emitter Voltage V(br)ceo: 3.3 kV
  • Collector Emitter Voltage Vces: 2.4 V
  • DC Collector Current: 1000 A
  • Module Configuration: Dual
  • Number of Pins: 7
  • Operating Temperature Range: -50°C to +150°C
  • Power Dissipation Max: 9.6 kW
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel

RoHS: Yes

Accessories:

  • DAVICO - D 25-10
  • TE Connectivity - 0-0160170-0