Datasheet BSM50GB120DLC - Infineon IGBT MODULE, DUAL, 1200 V — Datenblatt

Infineon BSM50GB120DLC

Part Number: BSM50GB120DLC

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT MODULE, DUAL, 1200 V

data sheetDownload Data Sheet

Docket:
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM50GB120DLC
Hцchstzulдssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties

Specifications:

  • Alternate Case Style: M34a
  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.6 V
  • Current Ic Continuous a Max: 50 A
  • Current Temperature: 80°C
  • DC Collector Current: 115 A
  • Fall Time tf: 0.03Вµs
  • Module Configuration: Dual
  • Mounting Type: Screw
  • Number of Pins: 7
  • Operating Temperature Range: -40°C to +125°C
  • Package / Case: Half Bridge 1
  • Power Dissipation Max: 460 W
  • Power Dissipation Pd: 460 W
  • Power Dissipation: 460 W
  • Pulsed Current Icm: 100 A
  • Rise Time: 0.05Вµs
  • Transistor Case Style: Module
  • Transistor Type:
  • Voltage Vces: 1.2kV

RoHS: Yes