Datasheet JX Semiconductor JX3S0040090M — Datenblatt

JX3S0040090M
900V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
reduced system size. Features
High Speed Switching with Low Capacitances
High Blocking Voltage with Low RDS(on)
Easy to parallel and simple to drive
ROHS Compliant, Halogen free Application
EV Charging
DC/DC Converters
Switch Mode Power Supplies
UPS
Solar PV inverters Ordering Information
Part Number
JX3S0040090M Marking Package Packaging JX3S0040090M TO247-3 Tube 1 JX3S0040090M
Absolute Maximum Ratings(Tc=25 )
Symbol Parameter Value Unit Drain-Source Voltage 900 V ID Drain Current(continuous)at Tc=25C 60 A ID Drain Current(continuous)at Tc=100C 48 A IDM Drain Current (pulsed) 132 A VGS Gate-Source Voltage -10/+22 V 325 W -55 to +150 C VDS PD
TJ, Tstg Power Dissipation TC = 25°C
Junction and Storage Temperature Range Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static
Symbol Parameter Test Conditions BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-body Leakage Current VGS(th) Gate Threshold Voltage VGSon Recommended turn-on Voltage VGSoff Recommended turn-off Voltage VGS =0V , TJ=25C …