PDF, 397 Kb, Sprache: en, Datei hochgeladen: Jan 22, 2026, Seiten: 2
N-Channel MOSFET Transistor in TO-220 package
Auszug aus dem Dokument
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z， IIRFZ48Z FEATURES Static drain-source on-resistance:
RDS(on) ≤11mΩ Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device
performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 61 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation @TC=25℃ 91 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature THERMAL CHARACTERISTICS
SYMBOL
Rth(ch-c)
Rth(ch-a) PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.64 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48Z， IIRFZ48Z ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=37A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS
VGS=0V; ID = 250μA MIN TYP MAX 55 V
4.0 V 11 mΩ ±0.2 μA VDS=55V; VGS= 0V 20 μA IS =37A, VGS = 0 V 1.3 V 2 2.0 UNIT isc & iscsemi is registered trademark …
