Datasheet Nexperia PMV65XP — Datenblatt
| Hersteller | Nexperia |
| Serie | PMV65XP |
20 V, einzelner P-Kanal-Trench-MOSFET
Datenblätter
Datasheet PMV65XP
PDF, 742 Kb, Sprache: en, Revision: 04201705, Datei hochgeladen: Oct 13, 2025, Seiten: 14
20 V, single P-channel Trench MOSFET
20 V, single P-channel Trench MOSFET
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Detaillierte Beschreibung
P-Kanal-Anreicherungsmodus-Feldeffekttransistor (FET) in einem kleinen SOT23 (TO-236AB) Surface-Mounted Device (SMD)-Kunststoffgehäuse mit Trench-MOSFET-Technologie.
Parameter
| Parameters / Models | PMV65XP,215 | PMV65XPVL |
|---|---|---|
| Automotive qualified | N | N |
| Ciss [typ] (pF) | 744 | 744 |
| Coss [typ] (pF) | 65 | 65 |
| Channel type | P | P |
| ID [max] (A) | -4.3 | -4.3 |
| Nr of transistors | 1 | 1 |
| Ordering code (12NC) | 934058736215 | 934058736235 |
| Ptot [max] (W) | 0.48 | 0.48 |
| Package name | SOT23 | SOT23 |
| Package version | SOT23 | SOT23 |
| Packing | SOT23_215 | SOT23_235 |
| Packing Quantity | 3,000 | 10,000 |
| Product status | Production | Production |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 7.7 | 7.7 |
| QGD [typ] (nC) | 1.65 | 1.65 |
| RDSon [max] @ VGS = 2.5 V (mΩ) | 92 | 92 |
| RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | 74 | 74 |
| Release date | 2011-01-24 | 2011-01-24 |
| Status | Active | Active |
| Tj [max] (°C) | 150 | 150 |
| VDS [max] (V) | -20 | -20 |
| VGS [max] (V) | 12 | 12 |
| VGSth @25 C [min] (V) | -0.47 | -0.47 |
| VGSth [max] @25 C (V) | -0.9 | -0.9 |
| VGSth [typ] (V) | -0.65 | -0.65 |
Modellreihe
Serie: PMV65XP (2)
Herstellerklassifikation
- MOSFETs > Small signal MOSFETs