Datasheet ON Semiconductor MCH6613 — Datenblatt

Ordering number : EN6920C MCH6613
Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6
Features
• •
• The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting
Excellent ON-resistance characteristic
1.5V drive Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Drain to Source Voltage Conditions N-channel VDSS
VGSS Gate to Source Voltage
Drain Current (DC)
Allowable Power Dissipation ID
IDP
PD Channel Temperature
Storage Temperature Drain Current (Pulse) PW≤10μs, duty cycle≤1% P-channel Unit 30 -30 V ±10 ±10 V 0.35 -0.2 A 1.4 -0.8 When mounted on ceramic substrate (900mm2×0.8mm) 1unit A 0.8 W Tch 150 °C Tstg -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions
unit : mm (typ)
7022A-006 6 5 Package Shipping memo MCH6613-TL-E MCPH6
SC-88, SC-70-6, SOT-363 3,000
pcs./reel Pb-Free Packing Type : TL 2 TL 3 0.65 FM LOT No. 0 to 0.02 1 Marking 4 …