Datasheet Navitas Semiconductor NV6257 — Datenblatt

NV6257 TARGET 650V Half-Bridge GaNFast™ Power IC
Features
GaNFast power IC
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• Two independent logic inputs with hysteresis
Enable input
Ultra-low standby current
Wide VCC range
Low-side turn-on dV/dt slew rate control
200 V/ns dV/dt immunity
ESD, high-side UVLO, shoot-through protection
Floating high-side with internal level shift
Integrated high-side bootstrap
High-frequency operation up to 2 MHz 650V eMode GaN FETs
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