Datasheet Semikron SEMIX302GB066HDS — Datenblatt

SEMiX302GB066HDs
Absolute Maximum Ratings
Symbol Conditions Values Unit IGBT
VCES
IC Tj = 25 °C
Tj = 175 °C 600 V Tc = 25 °C 379 A Tc = 80 °C 286 A 300 A ICnom
ICRM SEMiX® 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 419 A Tc = 80 °C 307 A 300 A VGES
VCC = 360 V
VGE ≤ 15 V
Tj = 150 °C
VCES ≤ 600 V Tj
Inverse diode SEMiX302GB066HDs IF Tj = 175 °C IFnom Features IFRM IFRM = 2xIFnom 600 A • Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532 IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1400 A -40 . 175 °C Typical Applications* Tstg Tj
Module
It(RMS)
Visol Tterminal = 80 °C
AC sinus 50Hz, t = 1 min • Matrix Converter
• Resonant Inverter
• Current Source Inverter Characteristics Remarks IGBT • Case temperature limited to TC=125°C
max. …