Datasheet Analog Devices HMC455LP3ETR — Datenblatt

HMC455LP3 / 455LP3E
v02.0605 LINEAR & POWER AMPLIFIERS -SMT 11 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP • PHS 3x3 mm QFN SMT Package Functional Diagram General Description
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between 1.7
and 2.5 GHz. Utilizing a minimum number of external
components the amplifier provides 13 dB of gain and
+28 dBm of saturated power at 56% PAE from a single
+5 Vdc supply voltage. The high output IP3 of +42
dBm coupled with the low VSWR of 1.4:1 make the
HMC455LP3 & HMC455LP3E ideal driver amplifiers for
PCS/3G wireless infrastructures. A low cost, leadless
3x3 mm QFN surface mount package (LP3) houses
the linear amplifier. The LP3 provides an exposed
base for excellent RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs= +5V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 1.7 -1.9
11.5 Gain Variation Over Temperature 13.5
0.012 Typ. Max. Min. 1.9 -2.2
10.5
0.02 13
0.012 Typ. Max. 2.2 -2.5
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