Datasheet Analog Devices HMC452QS16GETR — Datenblatt

HMC452QS16G / 452QS16GE
v01.0205 11 InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 -2.2 GHz Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier: Output IP3: +48 dBm • GSM, GPRS & EDGE 9 dB Gain @ 2100 MHz • CDMA & W-CDMA 53% PAE @ +31 dBm Pout • CATV/Cable Modem +24 dBm CDMA2000 Channel Power@ -45 dBc ACP • Fixed Wireless & WLL Single +5V Supply 22.5 dB Gain @ 400 MHz LINEAR & POWER AMPLIFIERS -SMT Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2 General Description Functional Diagram The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G(E)ideal power amplifiers for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications. Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 400 -410
20 Gain Variation Over
Temperature 22.5
0.012 Typ. Max. Min. 450 -496 …