HMC590
v02.0109 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 -10 GHz Typical Applications Features The HMC590 is ideal for use as a power amplifier for: Saturated Output Power: +31.5 dBm @ 25% PAE • Point-to-Point Radios Output IP3: +41 dBm • Point-to-Multi-Point Radios Gain: 24 dB • Test Equipment & Sensors DC Supply: +7V @ 820 mA • Military End-Use 50 Ohm Matched Input/Output • Space Die Size: 2.47 x 1.33 x 0.1 mm Functional Diagram General Description
The HMC590 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from
6 to 10 GHz. This amplifier die provides 24 dB of
gain, +31.5 dBm of saturated power at 25% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into MultiChip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test fixture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 520 mA, to yield +41 dBm OIP3.
For applications which require optimum output P1dB,
Idd should be set for 820 mA, to yield up to +32 dBm
Output P1dB. Electrical Specifi cations, TA = +25° C, Vdd = +7V, Idd = 820 mA[1]
Parameter Min. Frequency Range Typ. Max. Min. 6 -10 Gain 21 Gain Variation Over Temperature 24
0.05 Typ. Max. 6.8 -9
22
0.07 GHz 25
0.05 Units dB
0.07 dB/ °C Input Return Loss 10 10 dB Output Return Loss 10 10 dB 31.5 dBm 32 dBm 41 41 dBm 820 820 mA Output Power for 1 dB
Compression (P1dB) 27 Saturated Output Power (Psat) …