Datasheet Analog Devices HMC6981LS6TR — Datenblatt

HMC6981LS6
v03.1018 Amplifiers -Linear & Power -SMT GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 15 -20 GHz
Typical Applications Features The HMC6981LS6 is ideal for: P1dB Output Power: +32 dBm • Point-to-Point Radios 25% PAE @ +34 dBm Pout • Point-to-Multi-Point Radios Gain: 26 dB • SATCOM Output IP3: +43 dBm
50 Ohm Matched Input/Output
Ceramic 6 x 6 mm High Frequency Air Cavity Package Functional Diagram General Description
The HMC6981LS6 is a four-stage GaAs pHEMT
MMIC Power Amplifier with an integrated temperature
compensated on-chip Power Detector, which operates
between 15 and 20 GHz. The amplifier provides
26 dB of gain, +34 dBm of saturated output power,
and 25% PAE from a +5.5V supply. With an excellent
output IP3 of +43 dBm, the HMC6981LS6 is ideal for
linear applications such as high capacity point-to-point
or point-to-multi-point radios or SATCOM applications
demanding +34 dBm of efficient saturated output
power. The HMC6981LS6 is housed in a ceramic
6 x 6 mm high frequency air cavity package which
exhibits low thermal resistance and is compatible with
high volume surface mount manufacturing techniques.
The RF I/Os are internally matched to 50 Ohms. Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +5.5V, Idd = 1100 mA [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 15 -17 …