Datasheet Analog Devices HMC906A-DIE — Datenblatt

HMC906A
v02.0617 Amplifiers -Linear & Power -CHIP GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 -33.5 GHz
Typical Applications Features The HMC906A is ideal for: Saturated Output Power: +33.5 dBm @ 20% PAE • Satellite Communications High Output IP3: +44 dBm @ +24 dBm / tone • Point-to-Point Radios High Gain: 26.5 dB • Point-to-Multi-Point Radios DC Supply: +6V @ 1200 mA • VSAT No External Matching Required • Military & Space Die Size: 3.18 x 2.73 x 0.1 mm Functional Diagram General Description
The HMC906A is a four stage GaAs pHEMT MMIC
2 Watt Power Amplifier which operates between
27.3 and 33.5 GHz. The HMC906A provides 26.5 dB
of gain, and +33.5 dBm of saturated output power and
20% PAE from a +6V supply. The OIP3 of 40 dBm
at 28 dBm / tone provides excellent linearity for satellite communications. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via two
0.025 mm (1 mil) diameter wire bonds of length
0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA [1]
Parameter Min. Frequency Range
Gain 25 Input Return Loss Min. 26.5 25 Output Third Order Intercept (IP3)
Pout / tone = +24 dBm
Total Supply Current (Idd) Max. Units
GHz 26.5 dB 16 dB 33.5 dBm 33.5 34 dBm 44 43 dBm 33 31.5 1200
5 Typ.
31.5 -33.5 12 17
32 Saturated Output Power (Psat) Supply Voltage Max. 14 Output Return Loss …