Data Sheet GaAs, pHEMT, MMIC,1 W Power Amplifier,
20 GHz to 44 GHz
ADPA7005CHIP FEATURES FUNCTIONAL BLOCK DIAGRAM
VGG1 Output P1dB: 31 dBm typical at 20 GHz to 34 GHz
PSAT: 32 dBm typical at 20 GHz to 34 GHz
Gain: 17 dB typical at 20 GHz to 34 GHz
Output IP3: 41 dBm typical at 20 GHz to 34 GHz
Supply voltage: 5 V at 1200 mA maximum
50 Ω matched input/output
Die size: 3.75 mm × 3.47 mm × 0.1 mm VDD5 VDD3 VDD1 RFIN APPLICATIONS VREF RFOUT Military and space
Test instrumentation VGG2 VDD6 VDD4 VDD2 17319-001 VDET Figure 1. GENERAL DESCRIPTION
The ADPA7005CHIP is a gallium arsenide (GaAs),
pseudomorphic high electron mobility transistor (pHEMT),
monolithic microwave integrated circuit (MMIC), distributed
power amplifier that operates from 20 GHz to 44 GHz. The
amplifier provides 17 dB of small signal gain, 31 dBm output
power for 1 dB compression (P1dB), and a typical output third-Rev. 0 order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires
1200 mA from a 5 V supply on the supply voltage (VDD) and
features inputs and outputs that are internally matched to 50 Ω,
facilitating integration into multichip modules (MCMs). All
data is taken with the chip connected via two 0.025 mm wire
bonds that are at least 0.31 mm long. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility isassumed by Analog Devices for itsuse, nor for any infringementsofpatentsor other …